Method for synthesizing phosphor – silicon oxycarbide
https://doi.org/10.20914/2310-1202-2026-1-299-305
Abstract
This research is development of a laboratory-scale method for synthesizing silicon oxycarbide phosphor via hot-filament chemical vapor deposition and the characterization of the phosphor's properties in the form of thin films and dispersions. Silicon oxycarbide films in this study were characterized using advanced analytical techniques. Scanning electron microscopy (SEM) was performed on an Auriga 3916-FESEM microscope operating at 1 kV, providing high resolution for imaging surface morphology and structural features. Systematic variation in the amount of MCM-41 mesoporous silica granules (granule weights of 5, 10, and 15 g) allows for a detailed analysis of the effect of precursor ratios on the properties of thin films. Energy-dispersive X-ray diffraction analysis of films prepared from varying amounts of tetraethoxysilane (TEOS) and mesoporous silica MCM-41 granules confirms the presence of carbon, oxygen, and silicon, consistent with the use of controlled amounts of tetraethoxysilane (TEOS) and silica (MCM-41). Scanning electron microscopy reveals distinct morphologies in thin silicon oxycarbide films: using only tetraethoxysilane, a surface with compact, heterogeneously distributed aggregates is observed, while the introduction of both mesoporous TEOS and mesoporous silica MCM-41 granules leads to the formation of porous clusters. Enhanced photoluminescence was observed in films containing MCM-41 silica. The study reveals the synergistic interaction between TEOS and mesoporous silica beads MCM-41, providing valuable insights for the optimization of silicon oxycarbide thin films for a variety of applications ranging from microelectronics to optoelectronics.
About the Authors
I. E. Balderas
Moscow Polytechnic University
graduate student, polygraphic faculty, Bolshaya Semyonovskaya str., 38, Moscow, 107023, Russia
V. K. Dolgonosov
Moscow Polytechnic University
graduate student, polygraphic faculty, Bolshaya Semyonovskaya str., 38, Moscow, 107023, Russia
A. Y. Zhalybina
Moscow Polytechnic University
student, polygraphic faculty, Bolshaya Semyonovskaya str., 38, Moscow, 107023, Russia
V. A. Rod
Moscow Polytechnic University
head of the materials science laboratory, polygraphic faculty, Bolshaya Semyonovskaya str., 38, Moscow, 107023, Russia
A. N. Utekhin
Moscow Polytechnic University
Dr. Sci. (Chem.), polygraphic faculty, Bolshaya Semyonovskaya str., 38, Moscow, 107023, Russia
V. Y. Konyukhov
National Research Nuclear University MEPHI
Dr. Sci. (Chem.), professor, department of General Chemistry (No. 19) of the Institute of General Professional Training), Kashirskoe shosse, 31 Moscow, 115409, Russia
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Review
For citations:
Balderas I.E., Dolgonosov V.K., Zhalybina A.Y., Rod V.A., Utekhin A.N., Konyukhov V.Y. Method for synthesizing phosphor – silicon oxycarbide. Proceedings of the Voronezh State University of Engineering Technologies. 2026;88(1):299-305. (In Russ.) https://doi.org/10.20914/2310-1202-2026-1-299-305
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