COMPUTER MODELING OF THE ELECTRONIC PROPERTIES OF AMORPHOUS SILICON
https://doi.org/10.20914/2310-1202-2013-4-82-87
Abstract
The technique computer modelling electronic properties of amorphous silicon by fractal stated to model its nuclear structure. As the basic results of modelling the electronic structure, power and spectral characteristics modelling nuclear cluster is shown. The estimation and prospects of use of the received results is given.
About the Authors
B. A. Golodenko
Voronezh state university of engineering technologies
Russian Federation
Russian Federation
A. B. Golodenko
Концерн «Созвездие»
Russian Federation
Russian Federation
References
1. Golodenko, A.B. Fractal modelling the nuclear amorphous silicon structure on basis iterated functions systems [Text] / A.B. Golodenko // Engineering Physics. – 2009. № 8.– P.27-30.
2. Golodenko, A.B. Fractal modelling the mechanism of generation amorphous tetrahedral nuclear structures [Text] / A.B. Golodenko, B.A. Golodenko // Nanoand microsystem technics. – 2012. № 11. – P. 23-27.
3. Golodenko, A.B. Estimation of adequacy amorphous silicon nuclear structure fractal models [Text]/ A.B. Golodenko // Physics and technics of semiconductors. – 2010. V. 44. Part. – P. 87-91.
4. Golodenko, B.A. Tensor the approach to research and modelling of systems [Text] / B.A. Golodenko // Bulletin of VSTA. Ser.: Information technologies, modelling and control. –2008. № 2(36).– P. 50-55.
Review
For citations:
Golodenko B.A., Golodenko A.B. COMPUTER MODELING OF THE ELECTRONIC PROPERTIES OF AMORPHOUS SILICON. Proceedings of the Voronezh State University of Engineering Technologies. 2013;(4):82-87. (In Russ.) https://doi.org/10.20914/2310-1202-2013-4-82-87
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